Search Result of "Artorn Pokaipisit"

About 2 results
Img

ที่มา:วิทยาสารเกษตรศาสตร์ สาขา วิทยาศาสตร์

หัวเรื่อง:ไม่มีชื่อไทย (ชื่ออังกฤษ : Effect of Films Thickness on the Properties of ITO Thin Films Prepared by Electron Beam Evaporation)

ผู้เขียน:ImgArtorn Pokaipisit, ImgMati Horprathum, Imgพิเชษฐ ลิ้มสุวรรณ

สื่อสิ่งพิมพ์:pdf

Abstract

Indium tin oxide (ITO) thin films were prepared on glass slide substrates at various thicknesses by electron beam evaporation (e-beam) from a tablet of In2O3 and SnO2 (9:1). The ITO thin films were fabricated at substrate temperatures of 150 ?C, deposition rate of 2 ?/s and oxygen flow rate of 12 sccm. The structure, surface morphology, electrical and optical properties of ITO thin films were investigated. The structure and surface morphology of films were monitored by using X–ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The optical transmittance and sheet resistance of ITO thin films were measured by spectrophotometer and four-point probe. It was found that transmittance and sheet resistance of ITO thin films on glass slide decreased as film thickness increased from 200 nm to 700 nm. The transmittance spectra in the visible region (400-700 nm) and the sheet resistance decreased from 76.63% to 57.89% and from 16 ?/sq. to 4 ?/sq., respectively, with increasing the films thickness.

Article Info
Agriculture and Natural Resources -- formerly Kasetsart Journal (Natural Science), Volume 041, Issue 5, Jan 07 - Dec 07, Page 255 - 261 |  PDF |  Page 

Img

ที่มา:วิทยาสารเกษตรศาสตร์ สาขา วิทยาศาสตร์

หัวเรื่อง:ไม่มีชื่อไทย (ชื่ออังกฤษ : Influence of Annealing Temperature on the Properties of ITO Films Prepared by Electron Beam Evaporation and Ion-Assisted Deposition)

ผู้เขียน:ImgArtorn Pokaipisit, ImgMati Horprathum, Imgพิเชษฐ ลิ้มสุวรรณ

สื่อสิ่งพิมพ์:pdf

Abstract

Indium tin oxide (ITO) films were deposited on glass substrates by electron beam evaporation and ion-assisted deposition. Evaporation material source was 90 wt% In2O3 and 10 wt% SnO2 (purity of 99.99%). The ITO films were annealed in the air at 200, 250, 300 and 350 ?C for 1 h. The structures, electrical and optical properties of ITO films were investigated. The deposited films were analyzed by X-ray diffractometer, four-point probe method and UV-NIR spectrophotometer. It was found that the lowest resistivity (2.25 ? 10-4 ?-cm) and highest optical transmittance (83%) of ITO films were obtained at the annealing temperature of 300 ?C. The grain size increased from 36.69 to 46.73 nm with increasing annealing temperature.

Article Info
Agriculture and Natural Resources -- formerly Kasetsart Journal (Natural Science), Volume 042, Issue 5, Dec 99 - Dec 99, Page 362 - 366 |  PDF |  Page