Journal

Article
Characterization of N-type and P-type Aluminum Antimonides on Sisubstrates for room-temperature optoelectronic devices
Journal
Materials Science in Semiconductor Processing (ISSN: 13698001)
Volume
88
Issue
2018
Year
สิงหาคม 2018
Page
224-233
Class
นานาชาติ
DOI
https://doi.org/10.1016/j.mssp.2018.08.007
Related Link
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